型号:

IRFH8334TRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 44A 5X6 PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFH8334TRPBF PDF
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 14A
开态Rds(最大)@ Id, Vgs @ 25° C 9 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2.35V @ 25µA
闸电荷(Qg) @ Vgs 15nC @ 10V
输入电容 (Ciss) @ Vds 1180pF @ 10V
功率 - 最大 3.2W
安装类型 表面贴装
封装/外壳 8-PowerTDFN
供应商设备封装 PQFN(5x6)
包装 标准包装
其它名称 IRFH8334TRPBFDKR
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